Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

J. J. Wang; J. M. Hu; T. N. Yang; M. Feng; J. X. Zhang; L. Q. Chen; C. W. Nan

doi:10.1038/srep04553

Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

J. J. Wang, J. M. Hu, T. N. Yang, M. Feng, J. X. Zhang, L. Q. Chen, C. W. Nan

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Abstract

Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.

Original language	English (US)
Article number	4553
Journal	Scientific reports
Volume	4
DOIs	https://doi.org/10.1038/srep04553
State	Published - Apr 1 2014

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@article{e3cbf187fa5442278d832c5f3a5d8d20,

title = "Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures",

abstract = "Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.",

author = "Wang, {J. J.} and Hu, {J. M.} and Yang, {T. N.} and M. Feng and Zhang, {J. X.} and Chen, {L. Q.} and Nan, {C. W.}",

note = "Funding Information: This work is supported by the NSF of China (Grant Nos. 51332001, 11234005 and 51221291), Beijing Education Committee (Grant No. 20121000301), and the NSF under grant No DMR-1006541.",

year = "2014",

month = apr,

day = "1",

doi = "10.1038/srep04553",

language = "English (US)",

volume = "4",

journal = "Scientific reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

AU - Wang, J. J.

AU - Hu, J. M.

AU - Yang, T. N.

AU - Feng, M.

AU - Zhang, J. X.

AU - Chen, L. Q.

AU - Nan, C. W.

N1 - Funding Information: This work is supported by the NSF of China (Grant Nos. 51332001, 11234005 and 51221291), Beijing Education Committee (Grant No. 20121000301), and the NSF under grant No DMR-1006541.

PY - 2014/4/1

Y1 - 2014/4/1

N2 - Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.

AB - Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=84897417369&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897417369&partnerID=8YFLogxK

U2 - 10.1038/srep04553

DO - 10.1038/srep04553

M3 - Article

C2 - 24686503

AN - SCOPUS:84897417369

SN - 2045-2322

VL - 4

JO - Scientific reports

JF - Scientific reports

M1 - 4553

ER -

Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

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