Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Michael R. Hontz; Rongming Chu; Raghav Khanna

doi:10.1109/JEDS.2020.2981607

Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Michael R. Hontz, Rongming Chu, Raghav Khanna

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device. It is shown in simulation that ${C} _{\mathrm{ GD}}$ and ${C} _{\mathrm{ DS}}$ have a demonstrable dependence on substrate selection and is consistent with expectations regarding the substrate materials conductivity. The device model was then used in transient simulation where the choice of substrate was shown to noticeably affect the model's turn-on and turn-off energy.

Original language	English (US)
Article number	9040524
Pages (from-to)	331-335
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	8
DOIs	https://doi.org/10.1109/JEDS.2020.2981607
State	Published - 2020

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/JEDS.2020.2981607

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title = "Effect of Substrate Choice on Transient Performance of Lateral GaN FETs",

abstract = "This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device. It is shown in simulation that ${C} _{\mathrm{ GD}}$ and ${C} _{\mathrm{ DS}}$ have a demonstrable dependence on substrate selection and is consistent with expectations regarding the substrate materials conductivity. The device model was then used in transient simulation where the choice of substrate was shown to noticeably affect the model's turn-on and turn-off energy.",

author = "Hontz, {Michael R.} and Rongming Chu and Raghav Khanna",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2020",

doi = "10.1109/JEDS.2020.2981607",

language = "English (US)",

volume = "8",

pages = "331--335",

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AU - Hontz, Michael R.

AU - Chu, Rongming

AU - Khanna, Raghav

PY - 2020

Y1 - 2020

N2 - This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device. It is shown in simulation that ${C} _{\mathrm{ GD}}$ and ${C} _{\mathrm{ DS}}$ have a demonstrable dependence on substrate selection and is consistent with expectations regarding the substrate materials conductivity. The device model was then used in transient simulation where the choice of substrate was shown to noticeably affect the model's turn-on and turn-off energy.

AB - This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device. It is shown in simulation that ${C} _{\mathrm{ GD}}$ and ${C} _{\mathrm{ DS}}$ have a demonstrable dependence on substrate selection and is consistent with expectations regarding the substrate materials conductivity. The device model was then used in transient simulation where the choice of substrate was shown to noticeably affect the model's turn-on and turn-off energy.

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 9040524

ER -

Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Abstract

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