TY - JOUR
T1 - Effect of substrate doping on microstructure and reactivity of porous silicon
AU - Parimi, Venkata Sharat
AU - Tadigadapa, Srinivas A.
AU - Yetter, Richard A.
N1 - Funding Information:
The authors gratefully acknowledge the support and funding from the Defense Threat Reduction Agency (DTRA), Counter-WMD basic research program , under grant number HDTRA1-08-1-0006 . This publication was supported by the Pennsylvania State University Materials Research Institute Nanofabrication Lab and the National Science Foundation Cooperative Agreement No. ECS-0 335 765 . The authors wish to thank Julie Anderson and Lymaris Ortiz Rivera from the Materials Characterization Laboratory (MCL) at The Pennsylvania State University for help with gas adsorption measurements.
PY - 2014/8/5
Y1 - 2014/8/5
N2 - The effect of substrate doping and the choice of oxidizer on the reactivity of energetic porous silicon-oxidizer composites were examined in this study. Porous silicon samples were prepared from N and P-type substrates with widely different dopant concentrations, and impregnated with perchlorate salts or sulfur to form energetic composites, which were characterized using differential scanning calorimetry. While the low temperature exothermic reactions with perchlorate salts were found to be unaffected by the substrate doping properties, low temperature reactions with sulfur were found to be affected by the substrate doping. This is attributed to the effect of substrate doping on the microstructure of the porous silicon formed.
AB - The effect of substrate doping and the choice of oxidizer on the reactivity of energetic porous silicon-oxidizer composites were examined in this study. Porous silicon samples were prepared from N and P-type substrates with widely different dopant concentrations, and impregnated with perchlorate salts or sulfur to form energetic composites, which were characterized using differential scanning calorimetry. While the low temperature exothermic reactions with perchlorate salts were found to be unaffected by the substrate doping properties, low temperature reactions with sulfur were found to be affected by the substrate doping. This is attributed to the effect of substrate doping on the microstructure of the porous silicon formed.
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U2 - 10.1016/j.cplett.2014.06.049
DO - 10.1016/j.cplett.2014.06.049
M3 - Article
AN - SCOPUS:84904288911
SN - 0009-2614
VL - 609
SP - 129
EP - 133
JO - Chemical Physics Letters
JF - Chemical Physics Letters
ER -