Effect of substrate on the growth and properties of MoS                         2                          thin films grown by plasma-enhanced atomic layer deposition

Asad J. Mughal; Timothy N. Walter; Kayla A. Cooley; Adam Bertuch; Suzanne E. Mohney

doi:10.1116/1.5074201

Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition

Asad J. Mughal, Timothy N. Walter, Kayla A. Cooley, Adam Bertuch, Suzanne E. Mohney

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21 Scopus citations

Abstract

Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( ^t BuN) ₂ (NMe ₂ ) ₂ Mo and a remote H ₂ S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS ₂ was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS ₂ were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al ₂ O ₃ substrates compared to thermally oxidized silicon.

Original language	English (US)
Article number	010907
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	37
Issue number	1
DOIs	https://doi.org/10.1116/1.5074201
State	Published - Jan 1 2019

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Mughal, A. J., Walter, T. N., Cooley, K. A., Bertuch, A., & Mohney, S. E. (2019). Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 37(1), Article 010907. https://doi.org/10.1116/1.5074201

Mughal, Asad J. ; Walter, Timothy N. ; Cooley, Kayla A. et al. / Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2019 ; Vol. 37, No. 1.

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abstract = " Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.",

author = "Mughal, {Asad J.} and Walter, {Timothy N.} and Cooley, {Kayla A.} and Adam Bertuch and Mohney, {Suzanne E.}",

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Mughal, AJ, Walter, TN, Cooley, KA, Bertuch, A & Mohney, SE 2019, ' Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition ', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 37, no. 1, 010907. https://doi.org/10.1116/1.5074201

Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition . / Mughal, Asad J.; Walter, Timothy N.; Cooley, Kayla A. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 37, No. 1, 010907, 01.01.2019.

Research output: Contribution to journal › Article › peer-review

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N2 - Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.

AB - Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.

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Mughal AJ, Walter TN, Cooley KA, Bertuch A, Mohney SE. Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2019 Jan 1;37(1):010907. doi: 10.1116/1.5074201

Effect of substrate on the growth and properties of MoS ₂ thin films grown by plasma-enhanced atomic layer deposition

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