Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Kwang Hwan Cho; Min Gyu Kang; Chong Yun Kang; Seok Jin Yoon; Youngpak Lee; Jong Hee Kim; Bong Hee Cho

doi:10.1149/1.3243858

Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Kwang Hwan Cho, Min Gyu Kang, Chong Yun Kang, Seok Jin Yoon, Youngpak Lee, Jong Hee Kim, Bong Hee Cho

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Polycrystalline Ba_0.4 Sr_0.6 TiO₃ (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m ² and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm² at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V² and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

Original language	English (US)
Pages (from-to)	G230-G232
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	12
DOIs	https://doi.org/10.1149/1.3243858
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3243858

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@article{c1ec72cc0dd245f0b094a75212c32bc4,

title = "Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor",

abstract = "Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.",

author = "Cho, {Kwang Hwan} and Kang, {Min Gyu} and Kang, {Chong Yun} and Yoon, {Seok Jin} and Youngpak Lee and Kim, {Jong Hee} and Cho, {Bong Hee}",

year = "2009",

doi = "10.1149/1.3243858",

language = "English (US)",

volume = "156",

pages = "G230--G232",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

AU - Cho, Kwang Hwan

AU - Kang, Min Gyu

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Lee, Youngpak

AU - Kim, Jong Hee

AU - Cho, Bong Hee

PY - 2009

Y1 - 2009

N2 - Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

AB - Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=70350735896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350735896&partnerID=8YFLogxK

U2 - 10.1149/1.3243858

DO - 10.1149/1.3243858

M3 - Article

AN - SCOPUS:70350735896

SN - 0013-4651

VL - 156

SP - G230-G232

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Abstract

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