Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Kwang Hwan Cho; Min Gyu Kang; Chong Yun Kang; Seok Jin Yoon; Youngpak Lee; Jong Hee Kim; Bong Hee Cho

doi:10.1149/1.3243858

Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Kwang Hwan Cho
, Min Gyu Kang
, Chong Yun Kang
, Seok Jin Yoon
, Youngpak Lee
, Jong Hee Kim
, Bong Hee Cho

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Polycrystalline Ba_0.4 Sr_0.6 TiO₃ (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m ² and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm² at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V² and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

Original language	English (US)
Pages (from-to)	G230-G232
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	12
DOIs	https://doi.org/10.1149/1.3243858
State	Published - 2009

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.3243858

Cite this

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title = "Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor",

abstract = "Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48\% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.",

author = "Cho, \{Kwang Hwan\} and Kang, \{Min Gyu\} and Kang, \{Chong Yun\} and Yoon, \{Seok Jin\} and Youngpak Lee and Kim, \{Jong Hee\} and Cho, \{Bong Hee\}",

year = "2009",

doi = "10.1149/1.3243858",

language = "English (US)",

volume = "156",

pages = "G230--G232",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

AU - Cho, Kwang Hwan

AU - Kang, Min Gyu

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Lee, Youngpak

AU - Kim, Jong Hee

AU - Cho, Bong Hee

PY - 2009

Y1 - 2009

N2 - Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

AB - Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

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U2 - 10.1149/1.3243858

DO - 10.1149/1.3243858

M3 - Article

AN - SCOPUS:70350735896

SN - 0013-4651

VL - 156

SP - G230-G232

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Abstract

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