Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

Shenglin Jiang; Yaping Wang; Xiaoshan Zhang; Yuchun Xu; Pin Liu; Yike Zeng; Qing Wang; Guangzu Zhang

doi:10.1016/j.ceramint.2015.05.120

Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

Shenglin Jiang, Yaping Wang, Xiaoshan Zhang, Yuchun Xu, Pin Liu, Yike Zeng, Qing Wang, Guangzu Zhang

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The electrical properties, especially the degradation behavior against pulse-current stress, of the ZnO-based varistors with different doping contents of Zn have been investigated. The results show that the breakdown field (E_1mA/cm²) and the nonlinear coefficient (α) decreases with the increasing content of Zn due to the increase in the amount of the non-effective grain boundaries and the reduced barrier height. The doped Zn ions, acting as donors, enhance the electron concentration in grains and result in the decrease of the clamping voltage ratio (K) for the pulse-current. The varistors with 3.0 mol% doped Zn possess a K in the range from 2.11 to 2.41, and after applying a surge-current of 6000 A, the variation rate of the breakdown field (% ΔE_1mA/cm²) is only −9.8%, almost three times smaller than that of the samples without Zn doping.

Original language	English (US)
Pages (from-to)	11611-11617
Number of pages	7
Journal	Ceramics International
Volume	41
Issue number	9
DOIs	https://doi.org/10.1016/j.ceramint.2015.05.120
State	Published - Nov 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2015.05.120

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title = "Effect of Zn doping on stability of ZnO varistors under high pulse-current stress",

abstract = "The electrical properties, especially the degradation behavior against pulse-current stress, of the ZnO-based varistors with different doping contents of Zn have been investigated. The results show that the breakdown field (E1mA/cm2 ) and the nonlinear coefficient (α) decreases with the increasing content of Zn due to the increase in the amount of the non-effective grain boundaries and the reduced barrier height. The doped Zn ions, acting as donors, enhance the electron concentration in grains and result in the decrease of the clamping voltage ratio (K) for the pulse-current. The varistors with 3.0 mol% doped Zn possess a K in the range from 2.11 to 2.41, and after applying a surge-current of 6000 A, the variation rate of the breakdown field (% ΔE1mA/cm2 ) is only −9.8%, almost three times smaller than that of the samples without Zn doping.",

author = "Shenglin Jiang and Yaping Wang and Xiaoshan Zhang and Yuchun Xu and Pin Liu and Yike Zeng and Qing Wang and Guangzu Zhang",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l.",

year = "2015",

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doi = "10.1016/j.ceramint.2015.05.120",

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T1 - Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

AU - Jiang, Shenglin

AU - Wang, Yaping

AU - Zhang, Xiaoshan

AU - Xu, Yuchun

AU - Liu, Pin

AU - Zeng, Yike

AU - Wang, Qing

AU - Zhang, Guangzu

PY - 2015/11

Y1 - 2015/11

N2 - The electrical properties, especially the degradation behavior against pulse-current stress, of the ZnO-based varistors with different doping contents of Zn have been investigated. The results show that the breakdown field (E1mA/cm2 ) and the nonlinear coefficient (α) decreases with the increasing content of Zn due to the increase in the amount of the non-effective grain boundaries and the reduced barrier height. The doped Zn ions, acting as donors, enhance the electron concentration in grains and result in the decrease of the clamping voltage ratio (K) for the pulse-current. The varistors with 3.0 mol% doped Zn possess a K in the range from 2.11 to 2.41, and after applying a surge-current of 6000 A, the variation rate of the breakdown field (% ΔE1mA/cm2 ) is only −9.8%, almost three times smaller than that of the samples without Zn doping.

AB - The electrical properties, especially the degradation behavior against pulse-current stress, of the ZnO-based varistors with different doping contents of Zn have been investigated. The results show that the breakdown field (E1mA/cm2 ) and the nonlinear coefficient (α) decreases with the increasing content of Zn due to the increase in the amount of the non-effective grain boundaries and the reduced barrier height. The doped Zn ions, acting as donors, enhance the electron concentration in grains and result in the decrease of the clamping voltage ratio (K) for the pulse-current. The varistors with 3.0 mol% doped Zn possess a K in the range from 2.11 to 2.41, and after applying a surge-current of 6000 A, the variation rate of the breakdown field (% ΔE1mA/cm2 ) is only −9.8%, almost three times smaller than that of the samples without Zn doping.

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JF - Ceramics International

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ER -

Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

Abstract

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