TY - JOUR
T1 - Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation
AU - Mookerjea, Saurabh
AU - Krishnan, Ramakrishnan
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
N1 - Funding Information:
Manuscript received February 18, 2009; revised June 12, 2009. Current version published August 21, 2009. This work was supported in part by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this paper was arranged by Editor H. S. Momose.
PY - 2009
Y1 - 2009
N2 - Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.
AB - Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.
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U2 - 10.1109/TED.2009.2026516
DO - 10.1109/TED.2009.2026516
M3 - Article
AN - SCOPUS:69749099372
SN - 0018-9383
VL - 56
SP - 2092
EP - 2098
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -