Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation

Saurabh Mookerjea; Ramakrishnan Krishnan; Suman Datta; Vijaykrishnan Narayanan

doi:10.1109/TED.2009.2026516

Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation

Saurabh Mookerjea
, Ramakrishnan Krishnan
, Suman Datta
, Vijaykrishnan Narayanan

Computer Science and Engineering

Research output: Contribution to journal › Article › peer-review

223 Scopus citations

Abstract

Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (C_EFF) and drive current (I_EFF) for delay (τ_f = 0.69 R_swC_EFF, where R_sw=V_DD/2 I_EFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where C_EFF is approximately equal to the gate capacitance (C_gg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.

Original language	English (US)
Pages (from-to)	2092-2098
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	9
DOIs	https://doi.org/10.1109/TED.2009.2026516
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2026516

Cite this

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title = "Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation",

abstract = "Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.",

author = "Saurabh Mookerjea and Ramakrishnan Krishnan and Suman Datta and Vijaykrishnan Narayanan",

note = "Funding Information: Manuscript received February 18, 2009; revised June 12, 2009. Current version published August 21, 2009. This work was supported in part by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this paper was arranged by Editor H. S. Momose.",

year = "2009",

doi = "10.1109/TED.2009.2026516",

language = "English (US)",

volume = "56",

pages = "2092--2098",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation

AU - Mookerjea, Saurabh

AU - Krishnan, Ramakrishnan

AU - Datta, Suman

AU - Narayanan, Vijaykrishnan

N1 - Funding Information: Manuscript received February 18, 2009; revised June 12, 2009. Current version published August 21, 2009. This work was supported in part by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this paper was arranged by Editor H. S. Momose.

PY - 2009

Y1 - 2009

N2 - Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.

AB - Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.

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UR - https://www.scopus.com/pages/publications/69749099372#tab=citedBy

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DO - 10.1109/TED.2009.2026516

M3 - Article

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SN - 0018-9383

VL - 56

SP - 2092

EP - 2098

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation

Abstract

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