Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Jian Sian Li; Chao Ching Chiang; Hsiao Hsuan Wan; Sergei P. Stepanoff; Fan Ren; Aman Haque; Douglas Wolfe; S. J. Pearton

doi:10.1116/6.0003819

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Jian Sian Li, Chao Ching Chiang, Hsiao Hsuan Wan, Sergei P. Stepanoff, Fan Ren, Aman Haque, Douglas Wolfe, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

Abstract

Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.

Original language	English (US)
Article number	052203
Journal	Journal of Vacuum Science and Technology B
Volume	42
Issue number	5
DOIs	https://doi.org/10.1116/6.0003819
State	Published - Sep 1 2024

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.",

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AU - Li, Jian Sian

AU - Chiang, Chao Ching

AU - Wan, Hsiao Hsuan

AU - Stepanoff, Sergei P.

AU - Ren, Fan

AU - Haque, Aman

AU - Wolfe, Douglas

AU - Pearton, S. J.

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AB - Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.

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Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

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