Effects of barrier thinning on small-signal and 30-GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors

Keyphrases

• Aluminum Gallium Nitride (AlGaN) 100%
• Small Signal 100%
• GaN Heterostructure 100%
• Heterostructure Field-effect Transistors 100%
• Power Characteristics 100%
• Hot Electrons 66%
• 2-dimensional Electron Gas (2DEG) 66%
• SiNx 66%
• AlGaN Barrier 66%
• High Electric Field 33%
• I-V Curve 33%
• Frequency Dispersion 33%
• Current Signal 33%
• Pulsed I-V 33%
• Interface States 33%
• Surface States 33%
• Direct Current 33%
• Injected Electron 33%
• Gate Bias 33%
• Field Regions 33%
• Gas Channel 33%
• Barrier Thickness 33%
• Barrier Structure 33%
• AlGaN-GaN 33%
• Barrier Layer 33%
• Pulse Mode 33%
• Device-Measured 33%
• Charging Path 33%
• Gate Metal 33%
• Dispersive Behaviour 33%
• Barrier Device 33%

Engineering

• Heterojunctions 100%
• Field-Effect Transistor 100%
• Hot Electron 66%
• Barrier Layer 66%
• Gate Bias 33%
• Current Drain 33%
• Interface State 33%
• Frequency Dispersion 33%
• Current-Voltage Characteristic 33%
• High Electric Field 33%
• Surface State 33%
• Gas Channel 33%
• Millimeter Wave 33%
• Field Region 33%
• Metal Gate 33%
• Direct Current 33%