Abstract
Plasma-enhanced chemical vapor deposition was used to deposit a-Si:H thin films (approx. 1000 angstrom) at various temperatures below 300°C on Corning 7059 glass substrates using a silane-based plasma. These films were used as precursor materials to produce solid phase crystallized polycrystalline silicon (poly-Si) by conventional furnace annealing at 600°C in N2 ambient. The precursor a-Si and final poly-Si films were examined using spectroscopic ellipsometry and transmission electron microscopy. Precursor film deposition temperatures were found to affect the void density in the a-Si film and grain size in the resulting poly-Si film with lower deposition temperatures leading to higher void density in the a-Si film and larger grain size in the poly-Si film.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 373-378 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 403 |
| State | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering