Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

A. Henry; O. O. Awadelkarim; J. L. Lindström; G. S. Oehrlein

doi:10.1016/0921-5107(89)90232-8

Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

A. Henry
, O. O. Awadelkarim
, J. L. Lindström
, G. S. Oehrlein

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed.

Original language	English (US)
Pages (from-to)	147-151
Number of pages	5
Journal	Materials Science and Engineering B
Volume	4
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-5107(89)90232-8
State	Published - Oct 1989

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(89)90232-8

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title = "Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon",

abstract = "The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed.",

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AU - Henry, A.

AU - Awadelkarim, O. O.

AU - Lindström, J. L.

AU - Oehrlein, G. S.

PY - 1989/10

Y1 - 1989/10

N2 - The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed.

AB - The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed.

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UR - https://www.scopus.com/pages/publications/0024753108#tab=citedBy

U2 - 10.1016/0921-5107(89)90232-8

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JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-4

ER -

Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

Abstract

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