TY - JOUR
T1 - Effects of emissive layer architecture on recombination zone and Förster resonance energy transfer in organic light-emitting diodes
AU - Lü, Zhaoyue
AU - Hou, Ying
AU - Xiao, Jing
AU - Xu, Haisheng
N1 - Funding Information:
We thank the Fundamental Research Funds for the Central Universities ( 222201314022 & 222201314010 ), China Postdoctoral Science Foundation ( 2013M541480 ), Science and Technology Commission of Suzhou Municipality ( ZXG2012037 ), the National Natural Science Foundation of China ( 61204051 & 51303053 ) and the Science & Technology Development Project of Tai’an ( 20122053 ) for financially supporting this work.
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2014/12
Y1 - 2014/12
N2 - Recombination zone and Förster resonance energy transfer (FRET) in multilayer organic light-emitting diodes (OLEDs) were investigated. Basis device architecture is indium tin oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl-phenyl)-1, 1′-biphenyl-4, 4′-diamine (NPB)/4-(dicyanomethylene)-2-tert-butyl-6-(1, 1, 7, 7- tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/NPB (spacer)/tris-(8-hydroxyl quinoline) aluminum (Alq3)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP)/Al. Exciton recombination zone is located at DCJTB and Alq3 layers. When the NPB spacer is 10-nm-thick, Alq3 emission governs in electroluminescent (EL) spectra owing to absence of FRET between DCJTB and Alq3. FRET occurs while the NPB spacer is 5-nm-thick and thus DCJTB emission is dominant in EL spectra. As the emissive layout of DCJTB/Alq3/NPB substitutes for DCJTB/NPB/Alq3, both DCJTB and NPB emissions are observed due to electron-blocking effect of NPB.
AB - Recombination zone and Förster resonance energy transfer (FRET) in multilayer organic light-emitting diodes (OLEDs) were investigated. Basis device architecture is indium tin oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl-phenyl)-1, 1′-biphenyl-4, 4′-diamine (NPB)/4-(dicyanomethylene)-2-tert-butyl-6-(1, 1, 7, 7- tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/NPB (spacer)/tris-(8-hydroxyl quinoline) aluminum (Alq3)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP)/Al. Exciton recombination zone is located at DCJTB and Alq3 layers. When the NPB spacer is 10-nm-thick, Alq3 emission governs in electroluminescent (EL) spectra owing to absence of FRET between DCJTB and Alq3. FRET occurs while the NPB spacer is 5-nm-thick and thus DCJTB emission is dominant in EL spectra. As the emissive layout of DCJTB/Alq3/NPB substitutes for DCJTB/NPB/Alq3, both DCJTB and NPB emissions are observed due to electron-blocking effect of NPB.
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U2 - 10.1016/j.displa.2014.08.005
DO - 10.1016/j.displa.2014.08.005
M3 - Article
AN - SCOPUS:84908375633
SN - 0141-9382
VL - 35
SP - 247
EP - 251
JO - Displays
JF - Displays
IS - 5
ER -