Abstract
The hole-density dependence of the normal-state resistivity and transition temperature Tc of YBa2Cu3O7-x was studied using the electric field effect in ultrathin films of 1 to 8 unit cells thickness. The change in resistivity was found to be equal to the field-induced variation in the areal carrier density, leading to a relation that the conductivity is proportional to the hole density. A similar linear dependence was also found in Tc. However, a saturation occurred in both cases but at different hole densities. The result reveals different effects of hole filling in influencing normal-state and superconducting transport of YBa2Cu3O7-x.
Original language | English (US) |
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Pages (from-to) | 1240-1243 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 68 |
Issue number | 8 |
DOIs | |
State | Published - 1992 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy