Abstract
Lead zirconate titanate (PZT) thin films are currently employed in non-volatile ferroelectric memories and are intended to be used as the active material in a number of microelectromechanical systems. Several groups have reported that both the piezoelectric and dielectric characteristics of ferroelectric thin films improve with an increase of film thickness. It is possible that some of the improvements of the dielectric and piezoelectric characteristics reported for thicker films are associated with an increase of extrinsic contributions to the properties. To evaluate domain wall mobility in thicker films, the high and low-field stress response of sol-gel PZT were investigated. Films with thicknesses ranging from 0.6 to 5.0 μm thick were measured as a function of applied biaxial stress (±110 MPa). High-field measurements showed: (1) the coercive field to be insensitive to applied stress, (2) remanent polarizations to decrease about 20% at the maximum applied tension, (3) remanent polarizations to increase less than 10% with applied compression, and (4) all changes to be reversible over the stress range investigated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 81-86 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 493 |
| State | Published - Jan 1 1998 |
| Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering