Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors

J. Israel Ramirez; Yuanyuan V. Li; Hitesh Basantani; Thomas Nelson Jackson

doi:10.1109/DRC.2013.6633848

Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors

J. Israel Ramirez, Yuanyuan V. Li, Hitesh Basantani, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	71st Device Research Conference, DRC 2013 - Conference Digest
Pages	171-172
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2013.6633848
State	Published - 2013
Event	71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: Jun 23 2013 → Jun 26 2013

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	71st Device Research Conference, DRC 2013
Country/Territory	United States
City	Notre Dame, IN
Period	6/23/13 → 6/26/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2013.6633848

Cite this

@inproceedings{b25752b2cf1f4b128fe5a5e7c223c27d,

title = "Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors",

author = "Ramirez, {J. Israel} and Li, {Yuanyuan V.} and Hitesh Basantani and Jackson, {Thomas Nelson}",

year = "2013",

doi = "10.1109/DRC.2013.6633848",

language = "English (US)",

isbn = "9781479908110",

series = "Device Research Conference - Conference Digest, DRC",

pages = "171--172",

booktitle = "71st Device Research Conference, DRC 2013 - Conference Digest",

note = "71st Device Research Conference, DRC 2013 ; Conference date: 23-06-2013 Through 26-06-2013",

}

Ramirez, JI, Li, YV, Basantani, H & Jackson, TN 2013, Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors. in 71st Device Research Conference, DRC 2013 - Conference Digest., 6633848, Device Research Conference - Conference Digest, DRC, pp. 171-172, 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 6/23/13. https://doi.org/10.1109/DRC.2013.6633848

Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors. / Ramirez, J. Israel; Li, Yuanyuan V.; Basantani, Hitesh et al.
71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 171-172 6633848 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors

AU - Ramirez, J. Israel

AU - Li, Yuanyuan V.

AU - Basantani, Hitesh

AU - Jackson, Thomas Nelson

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84890066843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890066843&partnerID=8YFLogxK

U2 - 10.1109/DRC.2013.6633848

DO - 10.1109/DRC.2013.6633848

M3 - Conference contribution

AN - SCOPUS:84890066843

SN - 9781479908110

T3 - Device Research Conference - Conference Digest, DRC

SP - 171

EP - 172

BT - 71st Device Research Conference, DRC 2013 - Conference Digest

T2 - 71st Device Research Conference, DRC 2013

Y2 - 23 June 2013 through 26 June 2013

ER -

Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors

Publication series

Other

All Science Journal Classification (ASJC) codes

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