TY - JOUR
T1 - Effects of hydrogen on the radiation response of bipolar transistors
T2 - Experiment and modeling
AU - Batyrev, I. G.
AU - Hughart, D.
AU - Durand, R.
AU - Bounasser, M.
AU - Tuttle, B. R.
AU - Fleetwood, D. M.
AU - Schrimpf, R. D.
AU - Rashkeev, S. N.
AU - Dunham, G. W.
AU - Law, M.
AU - Pantelides, S. T.
N1 - Funding Information:
Manuscript received July 11, 2008; revised September 12, 2008. Current version published December 31, 2008. This work was supported in part by AFOSR MURI Grant (FA9550-05-1-0306), the U.S. Navy, and the McMinn Endowment at Vanderbilt University. I. G. Batyrev and S. T. Pantelides are with the Department of Physics, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). D. Hughart, R. Durand, M. Bounasser, D. M. Fleetwood, and R. D. Schrimpf are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]; [email protected]). B. R. Tuttle is with Penn State Erie, The Behrend College, Erie, PA 16563 USA (e-mail: [email protected]). S. N. Rashkeev is with the Idaho National Laboratory, Idaho Falls, ID 83415 USA (e-mail: [email protected]). G. W. Dunham is with NAVSEA Crane, Crane, IN 47522 USA (e-mail: gary. [email protected]). M. Law is with the Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 USA (e-mail: [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2008.2009353
PY - 2008/12
Y1 - 2008/12
N2 - Reactions of ${\rm H}-{2}$ in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs.
AB - Reactions of ${\rm H}-{2}$ in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs.
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U2 - 10.1109/TNS.2008.2009353
DO - 10.1109/TNS.2008.2009353
M3 - Article
AN - SCOPUS:58849086724
SN - 0018-9499
VL - 55
SP - 3039
EP - 3045
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 6
M1 - 4723752
ER -