Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels
- Mark A. Anders
- , Patrick M. Lenahan
- , Arthur H. Edwards
- , Peter A. Schultz
- , Renee M. Van Ginhoven
Research output: Contribution to journal › Article › peer-review
8
Link opens in a new tab
Scopus
citations