Abstract
The effects of postanneal conditions on the dielectric properties of high-dielectric-constant CaCu 3Ti 4O 2 (CCTO) thin films were investigated. The films were synthesized on Pt/Ti/SiO 2 substrates using pulsed-laser deposition (PLD) method. It was observed that the postannealing in nitrogen atmosphere had produced low-frequency high dielectric relaxation with increasing annealing temperature. It was also observed that annealing in oxygen atmosphere at high temperature had suppressed the relaxation and decreased the dielectric constant of the films.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6483-6485 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 95 |
| Issue number | 11 I |
| DOIs | |
| State | Published - Jun 1 2004 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)