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Effects of strain on the electrical properties of silicon carbide
Fiona M. Steel
,
Blair R. Tuttle
, Xiao Shen
, Sokrates T. Pantelides
School of Science (Behrend)
Research output
:
Contribution to journal
›
Article
›
peer-review
13
Scopus citations
Overview
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Keyphrases
Electrical Properties
100%
Strain Effect
100%
Silicon Carbide
100%
Biaxial Strain
50%
Electronic Properties
50%
Density Functional Calculations
50%
Tensile Strain
50%
Energy Gap
50%
Small Energy
50%
Uniaxial
50%
Effective Mass
50%
4H-SiC
50%
Conduction Band
50%
Compressive Strain
50%
Energy Splitting
50%
Mass Change
50%
Biaxial Tensile Strain
50%
Engineering
Electron Effective Mass
50%