Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Joshua A. Robinson; Kathleen A. Trumbull; Michael Labella; Randall Cavalero; Matthew J. Hollander; Michael Zhu; Maxwell T. Wetherington; Mark Fanton; David W. Snyder

doi:10.1063/1.3597356

Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Joshua A. Robinson, Kathleen A. Trumbull, Michael Labella, Randall Cavalero, Matthew J. Hollander, Michael Zhu, Maxwell T. Wetherington, Mark Fanton, David W. Snyder

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21 Scopus citations

Abstract

We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to increase with wafer misorientation from SiC(0001). This results in a monotonic increase in average graphene thickness, as well as a 30% increase in carrier density and 40% decrease in mobility up to 0.45° miscut toward (1 1- 00). Beyond 0.45°, average thickness and carrier density continues to increase; however, carrier mobility is similar to low-miscut angles, suggesting that the interaction between graphene and SiC(0001) may be fundamentally different that of graphene/SiC (1 1- 0n).

Original language	English (US)
Article number	222109
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3597356
State	Published - May 30 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)",

abstract = "We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to increase with wafer misorientation from SiC(0001). This results in a monotonic increase in average graphene thickness, as well as a 30% increase in carrier density and 40% decrease in mobility up to 0.45° miscut toward (1 1- 00). Beyond 0.45°, average thickness and carrier density continues to increase; however, carrier mobility is similar to low-miscut angles, suggesting that the interaction between graphene and SiC(0001) may be fundamentally different that of graphene/SiC (1 1- 0n).",

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AU - Robinson, Joshua A.

AU - Trumbull, Kathleen A.

AU - Labella, Michael

AU - Cavalero, Randall

AU - Hollander, Matthew J.

AU - Zhu, Michael

AU - Wetherington, Maxwell T.

AU - Fanton, Mark

AU - Snyder, David W.

PY - 2011/5/30

Y1 - 2011/5/30

N2 - We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to increase with wafer misorientation from SiC(0001). This results in a monotonic increase in average graphene thickness, as well as a 30% increase in carrier density and 40% decrease in mobility up to 0.45° miscut toward (1 1- 00). Beyond 0.45°, average thickness and carrier density continues to increase; however, carrier mobility is similar to low-miscut angles, suggesting that the interaction between graphene and SiC(0001) may be fundamentally different that of graphene/SiC (1 1- 0n).

AB - We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to increase with wafer misorientation from SiC(0001). This results in a monotonic increase in average graphene thickness, as well as a 30% increase in carrier density and 40% decrease in mobility up to 0.45° miscut toward (1 1- 00). Beyond 0.45°, average thickness and carrier density continues to increase; however, carrier mobility is similar to low-miscut angles, suggesting that the interaction between graphene and SiC(0001) may be fundamentally different that of graphene/SiC (1 1- 0n).

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Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Abstract

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