Effects of sulfur concentration on the electron field emission properties of nanocrystalline carbon thin films

S. Gupta; B. R. Weiner; B. L. Weiss; G. Morell

doi:10.1557/proc-675-w6.9.1

Effects of sulfur concentration on the electron field emission properties of nanocrystalline carbon thin films

S. Gupta, B. R. Weiner, B. L. Weiss, G. Morell

Division of Mathematics & Natural Sciences (Altoona)

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH₄/H₂) and hydrogen sulfide-hydrogen (H₂S/H₂) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 - 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900°C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (E_c) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.

Original language	English (US)
Pages (from-to)	W6.9.1-W6.9.6
Journal	Materials Research Society Symposium - Proceedings
Volume	675
DOIs	https://doi.org/10.1557/proc-675-w6.9.1
State	Published - 2001
Event	Nanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States Duration: Apr 17 2001 → Apr 20 2001

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-675-w6.9.1

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title = "Effects of sulfur concentration on the electron field emission properties of nanocrystalline carbon thin films",

abstract = "The electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 - 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900°C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.",

author = "S. Gupta and Weiner, {B. R.} and Weiss, {B. L.} and G. Morell",

note = "Funding Information: The author (SG) wishes to thank NSF-EPSCoR Graduate Fellowship (Grant No.NSF-EPS 9874782). This research work is also supported in parts from the Department of Defense (DoD ONR Grant No. N00014-98-1-0570), the Department of Energy (DoE Grant No. DE-FG02-99ER45796), and the University of Puerto Rico (UPR FIPI Grant No. 880344).; Nanotubes, Fullerenes, Nanostructured and Disordered Carbon ; Conference date: 17-04-2001 Through 20-04-2001",

year = "2001",

doi = "10.1557/proc-675-w6.9.1",

language = "English (US)",

volume = "675",

pages = "W6.9.1--W6.9.6",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Effects of sulfur concentration on the electron field emission properties of nanocrystalline carbon thin films

AU - Gupta, S.

AU - Weiner, B. R.

AU - Weiss, B. L.

AU - Morell, G.

N1 - Funding Information: The author (SG) wishes to thank NSF-EPSCoR Graduate Fellowship (Grant No.NSF-EPS 9874782). This research work is also supported in parts from the Department of Defense (DoD ONR Grant No. N00014-98-1-0570), the Department of Energy (DoE Grant No. DE-FG02-99ER45796), and the University of Puerto Rico (UPR FIPI Grant No. 880344).

PY - 2001

Y1 - 2001

N2 - The electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 - 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900°C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.

AB - The electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 - 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900°C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.

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DO - 10.1557/proc-675-w6.9.1

M3 - Conference article

AN - SCOPUS:0035559679

SN - 0272-9172

VL - 675

SP - W6.9.1-W6.9.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Nanotubes, Fullerenes, Nanostructured and Disordered Carbon

Y2 - 17 April 2001 through 20 April 2001

ER -

Effects of sulfur concentration on the electron field emission properties of nanocrystalline carbon thin films

Abstract

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