Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by bridgman method

Jun Luo; Wesley Hackenberger; Shujun Zhang; Tom R. Shrout

doi:10.1109/ULTSYM.2008.0064

Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by bridgman method

Jun Luo, Wesley Hackenberger, Shujun Zhang, Tom R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

PIN-PMN-PT (Pb(In_1/2Nb_1/2)O3-Pb(Mg _1/3Nb_2/3)O3-₃) single crystals with 26%-59% PIN were successfully by Bridgman technique. Elastic, dielectric and properties of ternary PIN-PMN-PT crystals were in comparison with PMN-PT (Pb(Mg _1/3Nb_2/3)O3 -3) crystals. It was demonstrated that PIN-PMN-PT possess as excellent piezoelectric properties as PMNPT , but can be operated at elevated temperature and electric field without the depoling issue. TRT of PIN-PMNPT with 26%-36% PIN were roughly in the range of 115 -135°C, 30-40°C higher than that of PMN-PT crystals;, EC were on the order of 4.5-5.6kV/cm, two to three higher than that of PMN-PT crystals. A full set of or derived elastic, piezoelectric and dielectric of PIN-PMN-PT crystals are present in this paper.

Original language	English (US)
Article number	4803381
Pages (from-to)	261-264
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
DOIs	https://doi.org/10.1109/ULTSYM.2008.0064
State	Published - 2008
Event	2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China Duration: Nov 2 2008 → Nov 5 2008

All Science Journal Classification (ASJC) codes

Acoustics and Ultrasonics

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10.1109/ULTSYM.2008.0064

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title = "Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by bridgman method",

abstract = "PIN-PMN-PT (Pb(In1/2Nb1/2)O3-Pb(Mg 1/3Nb2/3)O3-3) single crystals with 26%-59% PIN were successfully by Bridgman technique. Elastic, dielectric and properties of ternary PIN-PMN-PT crystals were in comparison with PMN-PT (Pb(Mg 1/3Nb2/3)O3 -3) crystals. It was demonstrated that PIN-PMN-PT possess as excellent piezoelectric properties as PMNPT , but can be operated at elevated temperature and electric field without the depoling issue. TRT of PIN-PMNPT with 26%-36% PIN were roughly in the range of 115 -135°C, 30-40°C higher than that of PMN-PT crystals;, EC were on the order of 4.5-5.6kV/cm, two to three higher than that of PMN-PT crystals. A full set of or derived elastic, piezoelectric and dielectric of PIN-PMN-PT crystals are present in this paper.",

author = "Jun Luo and Wesley Hackenberger and Shujun Zhang and Shrout, {Tom R.}",

year = "2008",

doi = "10.1109/ULTSYM.2008.0064",

language = "English (US)",

pages = "261--264",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2008 IEEE International Ultrasonics Symposium, IUS 2008 ; Conference date: 02-11-2008 Through 05-11-2008",

}

TY - JOUR

T1 - Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by bridgman method

AU - Luo, Jun

AU - Hackenberger, Wesley

AU - Zhang, Shujun

AU - Shrout, Tom R.

PY - 2008

Y1 - 2008

N2 - PIN-PMN-PT (Pb(In1/2Nb1/2)O3-Pb(Mg 1/3Nb2/3)O3-3) single crystals with 26%-59% PIN were successfully by Bridgman technique. Elastic, dielectric and properties of ternary PIN-PMN-PT crystals were in comparison with PMN-PT (Pb(Mg 1/3Nb2/3)O3 -3) crystals. It was demonstrated that PIN-PMN-PT possess as excellent piezoelectric properties as PMNPT , but can be operated at elevated temperature and electric field without the depoling issue. TRT of PIN-PMNPT with 26%-36% PIN were roughly in the range of 115 -135°C, 30-40°C higher than that of PMN-PT crystals;, EC were on the order of 4.5-5.6kV/cm, two to three higher than that of PMN-PT crystals. A full set of or derived elastic, piezoelectric and dielectric of PIN-PMN-PT crystals are present in this paper.

AB - PIN-PMN-PT (Pb(In1/2Nb1/2)O3-Pb(Mg 1/3Nb2/3)O3-3) single crystals with 26%-59% PIN were successfully by Bridgman technique. Elastic, dielectric and properties of ternary PIN-PMN-PT crystals were in comparison with PMN-PT (Pb(Mg 1/3Nb2/3)O3 -3) crystals. It was demonstrated that PIN-PMN-PT possess as excellent piezoelectric properties as PMNPT , but can be operated at elevated temperature and electric field without the depoling issue. TRT of PIN-PMNPT with 26%-36% PIN were roughly in the range of 115 -135°C, 30-40°C higher than that of PMN-PT crystals;, EC were on the order of 4.5-5.6kV/cm, two to three higher than that of PMN-PT crystals. A full set of or derived elastic, piezoelectric and dielectric of PIN-PMN-PT crystals are present in this paper.

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DO - 10.1109/ULTSYM.2008.0064

M3 - Conference article

AN - SCOPUS:67649364666

SN - 1051-0117

SP - 261

EP - 264

JO - Proceedings - IEEE Ultrasonics Symposium

JF - Proceedings - IEEE Ultrasonics Symposium

M1 - 4803381

T2 - 2008 IEEE International Ultrasonics Symposium, IUS 2008

Y2 - 2 November 2008 through 5 November 2008

ER -

Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by bridgman method

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