Electric field effect in high Tc superconducting ultrathin YBa2Cu3O7-x films

X. X. Xi; Q. Li; C. Doughty; C. Kwon; S. Bhattacharya; A. T. Findikoglu; T. Venkatesan

doi:10.1063/1.105656

Electric field effect in high T_c superconducting ultrathin YBa₂Cu₃O_7-x films

X. X. Xi, Q. Li, C. Doughty, C. Kwon, S. Bhattacharya, A. T. Findikoglu, T. Venkatesan

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Abstract

A multilayer high T_c superconducting field-effect transistor-like structure was made from ultrathin YBa₂Cu ₃O_7-x films. An epitaxially grown dielectric SrTiO ₃ insulation layer, which had a forward bias breakdown voltage of about 20 V, allowed an electric field induced change in the channel layer of 1.25×10¹³ carrier/cm² per volt of the gate voltage. A significant modulation of the normal state and superconducting properties was observed in samples with YBa₂Cu₃O_7-x channel layers of a few unit cells thick. By applying gate voltage of different polarities, T_c was both suppressed and enhanced by ∼1 K. The resistance was modulated by as much as 20% in the normal state and by over 1500% near the zero resistance temperature.

Original language	English (US)
Pages (from-to)	3470-3472
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	26
DOIs	https://doi.org/10.1063/1.105656
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Electric field effect in high Tc superconducting ultrathin YBa2Cu3O7-x films",

abstract = "A multilayer high Tc superconducting field-effect transistor-like structure was made from ultrathin YBa2Cu 3O7-x films. An epitaxially grown dielectric SrTiO 3 insulation layer, which had a forward bias breakdown voltage of about 20 V, allowed an electric field induced change in the channel layer of 1.25×1013 carrier/cm2 per volt of the gate voltage. A significant modulation of the normal state and superconducting properties was observed in samples with YBa2Cu3O7-x channel layers of a few unit cells thick. By applying gate voltage of different polarities, Tc was both suppressed and enhanced by ∼1 K. The resistance was modulated by as much as 20% in the normal state and by over 1500% near the zero resistance temperature.",

author = "Xi, {X. X.} and Q. Li and C. Doughty and C. Kwon and S. Bhattacharya and Findikoglu, {A. T.} and T. Venkatesan",

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T1 - Electric field effect in high Tc superconducting ultrathin YBa2Cu3O7-x films

AU - Xi, X. X.

AU - Li, Q.

AU - Doughty, C.

AU - Kwon, C.

AU - Bhattacharya, S.

AU - Findikoglu, A. T.

AU - Venkatesan, T.

PY - 1991

Y1 - 1991

N2 - A multilayer high Tc superconducting field-effect transistor-like structure was made from ultrathin YBa2Cu 3O7-x films. An epitaxially grown dielectric SrTiO 3 insulation layer, which had a forward bias breakdown voltage of about 20 V, allowed an electric field induced change in the channel layer of 1.25×1013 carrier/cm2 per volt of the gate voltage. A significant modulation of the normal state and superconducting properties was observed in samples with YBa2Cu3O7-x channel layers of a few unit cells thick. By applying gate voltage of different polarities, Tc was both suppressed and enhanced by ∼1 K. The resistance was modulated by as much as 20% in the normal state and by over 1500% near the zero resistance temperature.

AB - A multilayer high Tc superconducting field-effect transistor-like structure was made from ultrathin YBa2Cu 3O7-x films. An epitaxially grown dielectric SrTiO 3 insulation layer, which had a forward bias breakdown voltage of about 20 V, allowed an electric field induced change in the channel layer of 1.25×1013 carrier/cm2 per volt of the gate voltage. A significant modulation of the normal state and superconducting properties was observed in samples with YBa2Cu3O7-x channel layers of a few unit cells thick. By applying gate voltage of different polarities, Tc was both suppressed and enhanced by ∼1 K. The resistance was modulated by as much as 20% in the normal state and by over 1500% near the zero resistance temperature.

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Electric field effect in high T_c superconducting ultrathin YBa₂Cu₃O_7-x films

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