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Electric field induced domain rearrangement in potassium niobate thin films studied by in situ second harmonic generation measurements
Venkatraman Gopalan
, Rishi Raj
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
:
Contribution to journal
›
Article
›
peer-review
37
Scopus citations
Overview
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Dive into the research topics of 'Electric field induced domain rearrangement in potassium niobate thin films studied by in situ second harmonic generation measurements'. Together they form a unique fingerprint.
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Material Science
Film
100%
Thin Films
100%
Potassium Niobate
100%
Film Growth
75%
Magnesium Oxide
75%
Ferroelectric Thin Films
25%
Domain Wall
25%
Grain Boundary
25%
Engineering
Thin Films
100%
Harmonic Generation
100%
Induced Electric Field
100%
External Field
66%
Ray Diffraction
33%
Room Temperature
33%
Domain Wall
33%
Physics
Thin Films
100%
Second Harmonic Generation
100%
Electric Field
100%
Room Temperature
33%
Pinning
33%
Domain Wall
33%
Ferroelectric Material
33%
Grain Boundary
33%
Keyphrases
Low Angle Grain Boundary
20%
MgO(100)
20%
Net Area
20%