Electric field induced metallic behavior in thin crystals of ferroelectric α -In2Se3

Justin R. Rodriguez; William Murray; Kazunori Fujisawa; Seng Huat Lee; Alexandra L. Kotrick; Yixuan Chen; Nathan McKee; Sora Lee; Mauricio Terrones; Susan Trolier-Mckinstry; Thomas N. Jackson; Zhiqiang Mao; Zhiwen Liu; Ying Liu

doi:10.1063/5.0014945

Electric field induced metallic behavior in thin crystals of ferroelectric α -In₂Se₃

Justin R. Rodriguez, William Murray, Kazunori Fujisawa, Seng Huat Lee, Alexandra L. Kotrick, Yixuan Chen, Nathan McKee, Sora Lee, Mauricio Terrones, Susan Trolier-Mckinstry, Thomas N. Jackson, Zhiqiang Mao, Zhiwen Liu, Ying Liu

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.

Original language	English (US)
Article number	052901
Journal	Applied Physics Letters
Volume	117
Issue number	5
DOIs	https://doi.org/10.1063/5.0014945
State	Published - Aug 3 2020

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/5.0014945

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title = "Electric field induced metallic behavior in thin crystals of ferroelectric α -In2Se3",

abstract = "Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.",

author = "Rodriguez, {Justin R.} and William Murray and Kazunori Fujisawa and Lee, {Seng Huat} and Kotrick, {Alexandra L.} and Yixuan Chen and Nathan McKee and Sora Lee and Mauricio Terrones and Susan Trolier-Mckinstry and Jackson, {Thomas N.} and Zhiqiang Mao and Zhiwen Liu and Ying Liu",

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doi = "10.1063/5.0014945",

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T1 - Electric field induced metallic behavior in thin crystals of ferroelectric α -In2Se3

AU - Rodriguez, Justin R.

AU - Murray, William

AU - Fujisawa, Kazunori

AU - Lee, Seng Huat

AU - Kotrick, Alexandra L.

AU - Chen, Yixuan

AU - McKee, Nathan

AU - Lee, Sora

AU - Terrones, Mauricio

AU - Trolier-Mckinstry, Susan

AU - Jackson, Thomas N.

AU - Mao, Zhiqiang

AU - Liu, Zhiwen

AU - Liu, Ying

PY - 2020/8/3

Y1 - 2020/8/3

N2 - Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.

AB - Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.

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ER -

Electric field induced metallic behavior in thin crystals of ferroelectric α -In₂Se₃

Abstract

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