Electric field induced metallic behavior in thin crystals of ferroelectric α -In2Se3

Justin R. Rodriguez, William Murray, Kazunori Fujisawa, Seng Huat Lee, Alexandra L. Kotrick, Yixuan Chen, Nathan McKee, Sora Lee, Mauricio Terrones, Susan Trolier-Mckinstry, Thomas N. Jackson, Zhiqiang Mao, Zhiwen Liu, Ying Liu

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.

Original languageEnglish (US)
Article number052901
JournalApplied Physics Letters
Issue number5
StatePublished - Aug 3 2020

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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