TY - JOUR
T1 - Electrical behaviors of c-axis textured 0.975Bi 0.5 Na 0.5 TiO 3 -0.025BiCoO 3 thin films grown by pulsed laser deposition
AU - Guo, Feifei
AU - Yang, Bin
AU - Zhang, Shantao
AU - Liu, Danqing
AU - Wu, Fengmin
AU - Wang, Dali
AU - Cao, Wenwu
N1 - Funding Information:
This research was supported by the Key Technologies R&D Program of China under Grant No. 2013BAI03B06 , the National Nature Science Foundation of China ( 10704021 , 51102062 , and 11174127 ), the Key Scientific and Technological Project of Harbin (Grant No. 2009AA3BS131 ), the Postdoctoral Foundation of Heilongjiang Province (Grant No. LBH-Z10147 ), and the Fundamental Research Funds for the Central Universities (Grant No. HIT. NSRIF. 2011011 ).
PY - 2013/10/15
Y1 - 2013/10/15
N2 - The thin films of 0.975Bi 0.5 Na 0.5 TiO 3 -0.025BiCoO 3 (BNT-BC) have been successfully deposited on (1 1 1) Pt/Ti/SiO 2 /Si (1 0 0) substrates by pulse laser deposition and their ferroelectric, dielectric, local piezoelectric properties and temperature dependent leakage current behaviors have been investigated systematically. X-ray diffraction indicates the films are single phased and c-axis oriented. The thin films exhibit ferroelectric polarization-electric field (P-E) hysteresis loop with a remnant polarization (P r ) of 10.0 μC/cm 2 and an excellent fatigue resistance property up to 5 × 10 9 switching cycles. The dielectric constant and dielectric loss are 500 and 0.22 at 1 kHz, respectively. The tunability of the dielectric constant is about 12% at 20 kV/mm. The piezo-phase response hysteresis loop and piezo-amplitude response butterfly curve are observed by switching spectroscopy mode of piezoelectric force microscope (SS-PFM) and the piezoelectric coefficient d 33 is about 19-63 pm/V, which is comparable to other reports. The dominant leakage current conduction mechanisms are ohmic conduction at low electric field and Schottky emission at high electric field, respectively. Our results may be helpful for further work on BNT-based thin films with improved electric properties.
AB - The thin films of 0.975Bi 0.5 Na 0.5 TiO 3 -0.025BiCoO 3 (BNT-BC) have been successfully deposited on (1 1 1) Pt/Ti/SiO 2 /Si (1 0 0) substrates by pulse laser deposition and their ferroelectric, dielectric, local piezoelectric properties and temperature dependent leakage current behaviors have been investigated systematically. X-ray diffraction indicates the films are single phased and c-axis oriented. The thin films exhibit ferroelectric polarization-electric field (P-E) hysteresis loop with a remnant polarization (P r ) of 10.0 μC/cm 2 and an excellent fatigue resistance property up to 5 × 10 9 switching cycles. The dielectric constant and dielectric loss are 500 and 0.22 at 1 kHz, respectively. The tunability of the dielectric constant is about 12% at 20 kV/mm. The piezo-phase response hysteresis loop and piezo-amplitude response butterfly curve are observed by switching spectroscopy mode of piezoelectric force microscope (SS-PFM) and the piezoelectric coefficient d 33 is about 19-63 pm/V, which is comparable to other reports. The dominant leakage current conduction mechanisms are ohmic conduction at low electric field and Schottky emission at high electric field, respectively. Our results may be helpful for further work on BNT-based thin films with improved electric properties.
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U2 - 10.1016/j.apsusc.2013.07.013
DO - 10.1016/j.apsusc.2013.07.013
M3 - Article
AN - SCOPUS:84883160470
SN - 0169-4332
VL - 283
SP - 759
EP - 763
JO - Applied Surface Science
JF - Applied Surface Science
ER -