Electrical characteristics of GaAs MIS Schottky diodes

S. Ashok; J. M. Borrego; R. J. Gutmann

doi:10.1016/0038-1101(79)90135-7

Electrical characteristics of GaAs MIS Schottky diodes

S. Ashok, J. M. Borrego, R. J. Gutmann

Research output: Contribution to journal › Article › peer-review

141 Scopus citations

Abstract

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of GaAs metal-insulator-semiconductor (MIS) Schottky barrier diodes are investigated over a wide temperature range and compared with MS diodes. The effects of the insulating layer on barrier height and carrier transport are delineated by an activation energy analysis. Excess currents observed at low forward and reverse bias have also been analyzed and their cause identified. A capacitance anomaly consistently noticed in MIS Schottky barriers is resolved by stipulating a non-uniform interfacial layer, and a self-consistent model of the GaAs MIS Schottky barrier is developed by analyzing I-V and C-V data of both MIS and MS diodes.

Original language	English (US)
Pages (from-to)	621-631
Number of pages	11
Journal	Solid State Electronics
Volume	22
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(79)90135-7
State	Published - Jul 1979

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(79)90135-7

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@article{430c76eda4784805a278f5f402dd7284,

title = "Electrical characteristics of GaAs MIS Schottky diodes",

abstract = "The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of GaAs metal-insulator-semiconductor (MIS) Schottky barrier diodes are investigated over a wide temperature range and compared with MS diodes. The effects of the insulating layer on barrier height and carrier transport are delineated by an activation energy analysis. Excess currents observed at low forward and reverse bias have also been analyzed and their cause identified. A capacitance anomaly consistently noticed in MIS Schottky barriers is resolved by stipulating a non-uniform interfacial layer, and a self-consistent model of the GaAs MIS Schottky barrier is developed by analyzing I-V and C-V data of both MIS and MS diodes.",

author = "S. Ashok and Borrego, {J. M.} and Gutmann, {R. J.}",

year = "1979",

month = jul,

doi = "10.1016/0038-1101(79)90135-7",

language = "English (US)",

volume = "22",

pages = "621--631",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "7",

}

TY - JOUR

T1 - Electrical characteristics of GaAs MIS Schottky diodes

AU - Ashok, S.

AU - Borrego, J. M.

AU - Gutmann, R. J.

PY - 1979/7

Y1 - 1979/7

N2 - The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of GaAs metal-insulator-semiconductor (MIS) Schottky barrier diodes are investigated over a wide temperature range and compared with MS diodes. The effects of the insulating layer on barrier height and carrier transport are delineated by an activation energy analysis. Excess currents observed at low forward and reverse bias have also been analyzed and their cause identified. A capacitance anomaly consistently noticed in MIS Schottky barriers is resolved by stipulating a non-uniform interfacial layer, and a self-consistent model of the GaAs MIS Schottky barrier is developed by analyzing I-V and C-V data of both MIS and MS diodes.

AB - The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of GaAs metal-insulator-semiconductor (MIS) Schottky barrier diodes are investigated over a wide temperature range and compared with MS diodes. The effects of the insulating layer on barrier height and carrier transport are delineated by an activation energy analysis. Excess currents observed at low forward and reverse bias have also been analyzed and their cause identified. A capacitance anomaly consistently noticed in MIS Schottky barriers is resolved by stipulating a non-uniform interfacial layer, and a self-consistent model of the GaAs MIS Schottky barrier is developed by analyzing I-V and C-V data of both MIS and MS diodes.

UR - http://www.scopus.com/inward/record.url?scp=0018495795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018495795&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(79)90135-7

DO - 10.1016/0038-1101(79)90135-7

M3 - Article

AN - SCOPUS:0018495795

SN - 0038-1101

VL - 22

SP - 621

EP - 631

JO - Solid State Electronics

JF - Solid State Electronics

IS - 7

ER -

Electrical characteristics of GaAs MIS Schottky diodes

Abstract

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