Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO₂/p-Si Structures

Engineering

• Si Substrate 100%
• Polycrystalline 100%
• Transients 50%
• Silicon Substrate 50%
• Deep Level 50%
• Polysilicon 50%
• Si Interface 50%
• Dopants 50%
• Oxide Thickness 50%
• Magnetic Field Strength 50%

Material Science

• Silicon 100%
• Boron 50%
• Mechanical Strength 50%
• Single Crystal 50%
• Oxide Compound 50%
• Doping (Additives) 50%
• Deep-Level Transient Spectroscopy 50%

Keyphrases

• Polycrystalline Si 100%
• Boron Dopant 50%
• Single Crystal Si 50%