Electrical instabilities and 1/f noise in organic pentacene thin film transistors

P. V. Necliudov; M. Shur; D. J. Gundlach; T. N. Jackson

Electrical instabilities and 1/f noise in organic pentacene thin film transistors

P. V. Necliudov, M. Shur, D. J. Gundlach, T. N. Jackson

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.

Original language	English (US)
Pages (from-to)	JJ7.10.1-JJ7.10.6
Journal	Materials Research Society Symposium - Proceedings
Volume	660
State	Published - 2001
Event	Organic Electronic and Photonic Materials and Devices - Boston, MA, United States Duration: Nov 27 2000 → Nov 30 2000

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Electrical instabilities and 1/f noise in organic pentacene thin film transistors",

abstract = "We report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.",

author = "Necliudov, {P. V.} and M. Shur and Gundlach, {D. J.} and Jackson, {T. N.}",

note = "Funding Information: DARPA (Program Monitor Dr. G. Henderson) has supported this research under contract #N 61331-98-C-0021 via subcontract from Sarnoff Corporation.; Organic Electronic and Photonic Materials and Devices ; Conference date: 27-11-2000 Through 30-11-2000",

year = "2001",

language = "English (US)",

volume = "660",

pages = "JJ7.10.1--JJ7.10.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Electrical instabilities and 1/f noise in organic pentacene thin film transistors

AU - Necliudov, P. V.

AU - Shur, M.

AU - Gundlach, D. J.

AU - Jackson, T. N.

N1 - Funding Information: DARPA (Program Monitor Dr. G. Henderson) has supported this research under contract #N 61331-98-C-0021 via subcontract from Sarnoff Corporation.

PY - 2001

Y1 - 2001

N2 - We report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.

AB - We report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.

UR - http://www.scopus.com/inward/record.url?scp=0035558563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035558563&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035558563

SN - 0272-9172

VL - 660

SP - JJ7.10.1-JJ7.10.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Organic Electronic and Photonic Materials and Devices

Y2 - 27 November 2000 through 30 November 2000

ER -

Electrical instabilities and 1/f noise in organic pentacene thin film transistors

Abstract

All Science Journal Classification (ASJC) codes

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