Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

Tapobrata Bandyopadhyay; Ritwik Chatterjee; Daehyun Chung; Madhavan Swaminathan; Rao Tummala

doi:10.1109/EPEPS.2009.5338462

Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

Tapobrata Bandyopadhyay, Ritwik Chatterjee, Daehyun Chung, Madhavan Swaminathan, Rao Tummala

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

24 Scopus citations

Abstract

This paper presents analytical modeling and parametric study of the voltage dependent metal-oxide-semiconductor (MOS) capacitance of annular and co-axial TSVs. 3D electromagnetic (EM) simulations of TSVs are performed considering the depletion region. A low loss TSV structure is proposed utilizing the MOS capacitance effect.

Original language	English (US)
Title of host publication	2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09
Pages	117-120
Number of pages	4
DOIs	https://doi.org/10.1109/EPEPS.2009.5338462
State	Published - 2009
Event	2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09 - Portland, OR, United States Duration: Oct 19 2009 → Oct 21 2009

Publication series

Name	2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09

Conference

Conference	2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09
Country/Territory	United States
City	Portland, OR
Period	10/19/09 → 10/21/09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EPEPS.2009.5338462

Cite this

Bandyopadhyay, T., Chatterjee, R., Chung, D., Swaminathan, M., & Tummala, R. (2009). Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects. In 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09 (pp. 117-120). Article 5338462 (2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09). https://doi.org/10.1109/EPEPS.2009.5338462

Bandyopadhyay, Tapobrata ; Chatterjee, Ritwik ; Chung, Daehyun et al. / Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects. 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09. 2009. pp. 117-120 (2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09).

@inproceedings{7e3779b73509404090af4631289e5536,

title = "Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects",

abstract = "This paper presents analytical modeling and parametric study of the voltage dependent metal-oxide-semiconductor (MOS) capacitance of annular and co-axial TSVs. 3D electromagnetic (EM) simulations of TSVs are performed considering the depletion region. A low loss TSV structure is proposed utilizing the MOS capacitance effect.",

author = "Tapobrata Bandyopadhyay and Ritwik Chatterjee and Daehyun Chung and Madhavan Swaminathan and Rao Tummala",

year = "2009",

doi = "10.1109/EPEPS.2009.5338462",

language = "English (US)",

isbn = "9781424444472",

series = "2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09",

pages = "117--120",

booktitle = "2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09",

note = "2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09 ; Conference date: 19-10-2009 Through 21-10-2009",

}

Bandyopadhyay, T, Chatterjee, R, Chung, D, Swaminathan, M & Tummala, R 2009, Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects. in 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09., 5338462, 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09, pp. 117-120, 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09, Portland, OR, United States, 10/19/09. https://doi.org/10.1109/EPEPS.2009.5338462

Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects. / Bandyopadhyay, Tapobrata; Chatterjee, Ritwik; Chung, Daehyun et al.
2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09. 2009. p. 117-120 5338462 (2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

AU - Bandyopadhyay, Tapobrata

AU - Chatterjee, Ritwik

AU - Chung, Daehyun

AU - Swaminathan, Madhavan

AU - Tummala, Rao

PY - 2009

Y1 - 2009

N2 - This paper presents analytical modeling and parametric study of the voltage dependent metal-oxide-semiconductor (MOS) capacitance of annular and co-axial TSVs. 3D electromagnetic (EM) simulations of TSVs are performed considering the depletion region. A low loss TSV structure is proposed utilizing the MOS capacitance effect.

AB - This paper presents analytical modeling and parametric study of the voltage dependent metal-oxide-semiconductor (MOS) capacitance of annular and co-axial TSVs. 3D electromagnetic (EM) simulations of TSVs are performed considering the depletion region. A low loss TSV structure is proposed utilizing the MOS capacitance effect.

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DO - 10.1109/EPEPS.2009.5338462

M3 - Conference contribution

AN - SCOPUS:74549140252

SN - 9781424444472

T3 - 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09

SP - 117

EP - 120

BT - 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09

T2 - 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09

Y2 - 19 October 2009 through 21 October 2009

ER -

Bandyopadhyay T, Chatterjee R, Chung D, Swaminathan M, Tummala R. Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects. In 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09. 2009. p. 117-120. 5338462. (2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09). doi: 10.1109/EPEPS.2009.5338462

Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

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