Abstract
Field-induced phase transformations in antiferroelectric lead zirconate thin films were investigated at various temperatures. Films with (240) preferred orientations were prepared on Pt-coated Si substrates by a reactive magnetron co-sputtering method followed by rapid thermal annealing. Crystallization temperatures between 600 and 700 °C resulted in square double hysteresis loops with large values of the maximum polarization (up to 70 μC/cm2). These very large values of induced polarization make such films attractive for energy storage applications. The phase transformations between the orthorhombic antiferroelectric phase and a rhombohedral ferroelectric phase, as well as ferroelectric-ferroelectric transitions were observed by studying the dielectric properties and the polarization-electric field hysteresis as a function of temperature. The behavior of the films is largely similar to that observed in single crystals, although the antiferroelectric-paraelectric phase transition temperature was increased by approximately 20 °C. Work on the strain change accompanying the field-induced transformation will also be reported.
Original language | English (US) |
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Pages | 405-408 |
Number of pages | 4 |
State | Published - Dec 1 1996 |
Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
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City | East Brunswick, NJ, USA |
Period | 8/18/96 → 8/21/96 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering