@inproceedings{b400be0f3d174f808eff26d518f71c26,
title = "Electrical properties of back-gated n-layer graphene films",
abstract = "We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V G) in the range 25 < VG < 110 V; some films exhibited as much azs a factor of ∼50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.",
author = "P. Joshi and A. Gupta and Eklund, {P. C.} and S. Tadigadapa",
year = "2007",
doi = "10.1117/12.707654",
language = "English (US)",
isbn = "0819465771",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "MEMS/MOEMS Components and Their Applications IV",
note = "MEMS/MOEMS Components and Their Applications IV ; Conference date: 22-01-2007 Through 23-01-2007",
}