Abstract
The effect of zirconia (ZrO 2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO 2 buffer layers retained acceptable capacitance densities (>350 nF/cm 2 for 50 nm thick ZrO 2), while significantly reducing leakage currents and improving reliability (<10 -7 A/cm 2 after 1 h at 25 VDC for 100 nm thick ZrO 2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.
Original language | English (US) |
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Pages (from-to) | 3426-3430 |
Number of pages | 5 |
Journal | Journal of the American Ceramic Society |
Volume | 89 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2006 |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry