Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)