Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications

Hang Beum Shin; David Saint John; Myung Yoon Lee; Nikolas J. Podraza; Thomas N. Jackson

doi:10.1063/1.4829013

Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si_1-xC_x:H for microbolometer applications

Hang Beum Shin, David Saint John, Myung Yoon Lee, Nikolas J. Podraza, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si _1-xC_x:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε₁ + iε₂) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

Original language	English (US)
Article number	183705
Journal	Journal of Applied Physics
Volume	114
Issue number	18
DOIs	https://doi.org/10.1063/1.4829013
State	Published - Nov 14 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.4829013

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title = "Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications",

abstract = "Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.",

author = "Shin, {Hang Beum} and {Saint John}, David and Lee, {Myung Yoon} and Podraza, {Nikolas J.} and Jackson, {Thomas N.}",

note = "Funding Information: Research was sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory and was accomplished under Cooperative Agreement No. W911NF-0-2-0026.",

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doi = "10.1063/1.4829013",

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T1 - Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications

AU - Shin, Hang Beum

AU - Saint John, David

AU - Lee, Myung Yoon

AU - Podraza, Nikolas J.

AU - Jackson, Thomas N.

N1 - Funding Information: Research was sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory and was accomplished under Cooperative Agreement No. W911NF-0-2-0026.

PY - 2013/11/14

Y1 - 2013/11/14

N2 - Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

AB - Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

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Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si_1-xC_x:H for microbolometer applications

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