Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications

Hang Beum Shin; David Saint John; Myung Yoon Lee; Nikolas J. Podraza; Thomas N. Jackson

doi:10.1063/1.4829013

Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si_1-xC_x:H for microbolometer applications

Hang Beum Shin
, David Saint John
, Myung Yoon Lee
, Nikolas J. Podraza
, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si _1-xC_x:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε₁ + iε₂) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

Original language	English (US)
Article number	183705
Journal	Journal of Applied Physics
Volume	114
Issue number	18
DOIs	https://doi.org/10.1063/1.4829013
State	Published - Nov 14 2013

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4829013

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@article{f8ee53e361a24e2f851396722885e4d7,

title = "Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications",

abstract = "Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.",

author = "Shin, \{Hang Beum\} and \{Saint John\}, David and Lee, \{Myung Yoon\} and Podraza, \{Nikolas J.\} and Jackson, \{Thomas N.\}",

note = "Funding Information: Research was sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory and was accomplished under Cooperative Agreement No. W911NF-0-2-0026.",

year = "2013",

month = nov,

day = "14",

doi = "10.1063/1.4829013",

language = "English (US)",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications

AU - Shin, Hang Beum

AU - Saint John, David

AU - Lee, Myung Yoon

AU - Podraza, Nikolas J.

AU - Jackson, Thomas N.

N1 - Funding Information: Research was sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory and was accomplished under Cooperative Agreement No. W911NF-0-2-0026.

PY - 2013/11/14

Y1 - 2013/11/14

N2 - Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

AB - Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

UR - https://www.scopus.com/pages/publications/84887916318

UR - https://www.scopus.com/pages/publications/84887916318#tab=citedBy

U2 - 10.1063/1.4829013

DO - 10.1063/1.4829013

M3 - Article

AN - SCOPUS:84887916318

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 18

M1 - 183705

ER -

Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si_1-xC_x:H for microbolometer applications

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