@inproceedings{0a03d52b07644ca4bab68e7a82b0f5ae,
title = "Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition",
abstract = "Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 105 and 1010 Ωcm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.",
author = "Chung, {H. J.} and Huh, {S. W.} and Polyakov, {A. Y.} and S. Nigam and Q. Li and J. Grim and M. Skowronski and Glaser, {E. R.} and Carlos, {W. E.} and Freitas, {J. A.} and Fanton, {M. A.}",
year = "2006",
doi = "10.4028/0-87849-425-1.625",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "625--628",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}