Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition

H. J. Chung; S. W. Huh; A. Y. Polyakov; S. Nigam; Q. Li; J. Grim; M. Skowronski; E. R. Glaser; W. E. Carlos; J. A. Freitas; M. A. Fanton

doi:10.4028/0-87849-425-1.625

Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition

H. J. Chung
, S. W. Huh
, A. Y. Polyakov
, S. Nigam
, Q. Li
, J. Grim
, M. Skowronski
, E. R. Glaser
, W. E. Carlos
, J. A. Freitas
, M. A. Fanton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from E_c-0.14 eV (nitrogen donors) to E_v+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 10⁵ and 10¹⁰ Ωcm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Publisher	Trans Tech Publications Ltd
Pages	625-628
Number of pages	4
Edition	PART 1
ISBN (Print)	9780878494255
DOIs	https://doi.org/10.4028/0-87849-425-1.625
State	Published - 2006
Event	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005

Publication series

Name	Materials Science Forum
Number	PART 1
Volume	527-529
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/Territory	United States
City	Pittsburgh, PA
Period	9/18/05 → 9/23/05

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-425-1.625

Cite this

Chung, H. J., Huh, S. W., Polyakov, A. Y., Nigam, S., Li, Q., Grim, J., Skowronski, M., Glaser, E. R., Carlos, W. E., Freitas, J. A., & Fanton, M. A. (2006). Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 625-628). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.625

Chung, H. J. ; Huh, S. W. ; Polyakov, A. Y. et al. / Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. Trans Tech Publications Ltd, 2006. pp. 625-628 (Materials Science Forum; PART 1).

@inproceedings{0a03d52b07644ca4bab68e7a82b0f5ae,

title = "Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition",

abstract = "Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 105 and 1010 Ωcm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.",

author = "Chung, \{H. J.\} and Huh, \{S. W.\} and Polyakov, \{A. Y.\} and S. Nigam and Q. Li and J. Grim and M. Skowronski and Glaser, \{E. R.\} and Carlos, \{W. E.\} and Freitas, \{J. A.\} and Fanton, \{M. A.\}",

year = "2006",

doi = "10.4028/0-87849-425-1.625",

language = "English (US)",

isbn = "9780878494255",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "625--628",

booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",

edition = "PART 1",

note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",

}

Chung, HJ, Huh, SW, Polyakov, AY, Nigam, S, Li, Q, Grim, J, Skowronski, M, Glaser, ER, Carlos, WE, Freitas, JA & Fanton, MA 2006, Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, Trans Tech Publications Ltd, pp. 625-628, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05. https://doi.org/10.4028/0-87849-425-1.625

Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition. / Chung, H. J.; Huh, S. W.; Polyakov, A. Y. et al.
Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. Trans Tech Publications Ltd, 2006. p. 625-628 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition

AU - Chung, H. J.

AU - Huh, S. W.

AU - Polyakov, A. Y.

AU - Nigam, S.

AU - Li, Q.

AU - Grim, J.

AU - Skowronski, M.

AU - Glaser, E. R.

AU - Carlos, W. E.

AU - Freitas, J. A.

AU - Fanton, M. A.

PY - 2006

Y1 - 2006

N2 - Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 105 and 1010 Ωcm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

AB - Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 105 and 1010 Ωcm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

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U2 - 10.4028/0-87849-425-1.625

DO - 10.4028/0-87849-425-1.625

M3 - Conference contribution

AN - SCOPUS:37849044869

SN - 9780878494255

T3 - Materials Science Forum

SP - 625

EP - 628

BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

PB - Trans Tech Publications Ltd

T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)

Y2 - 18 September 2005 through 23 September 2005

ER -

Chung HJ, Huh SW, Polyakov AY, Nigam S, Li Q, Grim J et al. Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd. 2006. p. 625-628. (Materials Science Forum; PART 1). doi: 10.4028/0-87849-425-1.625

Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition

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