Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition

H. J. Chung, S. W. Huh, A. Y. Polyakov, S. Nigam, Q. Li, J. Grim, M. Skowronski, E. R. Glaser, W. E. Carlos, J. A. Freitas, M. A. Fanton

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