Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

Ranbir Singh; S. J. Fonash; S. Ashok; P. J. Caplan; J. Shappirio; M. Hage-Ali; J. Ponpon

doi:10.1116/1.572127

Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

Ranbir Singh, S. J. Fonash, S. Ashok, P. J. Caplan, J. Shappirio, M. Hage-Ali, J. Ponpon

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Abstract

A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.

Original language	English (US)
Pages (from-to)	334-336
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	1
Issue number	2
DOIs	https://doi.org/10.1116/1.572127
State	Published - Apr 1983

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.",

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AU - Singh, Ranbir

AU - Fonash, S. J.

AU - Ashok, S.

AU - Caplan, P. J.

AU - Shappirio, J.

AU - Hage-Ali, M.

AU - Ponpon, J.

PY - 1983/4

Y1 - 1983/4

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AB - A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.

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Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

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