Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Ryan J. Waskiewicz; Brian R. Manning; Duane J. McCrory; Patrick M. Lenahan

doi:10.1063/1.5108961

Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Ryan J. Waskiewicz, Brian R. Manning, Duane J. McCrory, Patrick M. Lenahan

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.

Original language	English (US)
Article number	125709
Journal	Journal of Applied Physics
Volume	126
Issue number	12
DOIs	https://doi.org/10.1063/1.5108961
State	Published - Sep 28 2019

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.5108961

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title = "Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors",

abstract = "We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.",

author = "Waskiewicz, {Ryan J.} and Manning, {Brian R.} and McCrory, {Duane J.} and Lenahan, {Patrick M.}",

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AU - Waskiewicz, Ryan J.

AU - Manning, Brian R.

AU - McCrory, Duane J.

AU - Lenahan, Patrick M.

PY - 2019/9/28

Y1 - 2019/9/28

N2 - We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.

AB - We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.

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JF - Journal of Applied Physics

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Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Abstract

All Science Journal Classification (ASJC) codes

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