Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.