Electrically detected magnetic resonance and near-zero field magnetoresistance in ²⁸Si/²⁸SiO₂

Keyphrases

• Magnetoresistance 100%
• Near-zero 100%
• Zero Field 100%
• Electrically Detected Magnetic Resonance 100%
• Oxides 80%
• Silicon Dangling Bond 60%
• Si-SiO2 Interface 60%
• 29Si 60%
• Leakage Current 40%
• Si-SiO2 40%
• Trap-assisted Tunneling 40%
• Spin-dependent 20%
• Order of Magnitude 20%
• Tunneling 20%
• Interface Traps 20%
• Tunneling Current 20%
• E′ Centers 20%
• Hyperfine Interactions 20%
• Dangling Bonds 20%
• Dangling Bond Defect 20%
• Metal-insulator-metal Capacitor 20%
• Time-dependent Dielectric Breakdown 20%
• Magnetic Resonance Spectrum 20%
• Metal-oxide-semiconductor Devices 20%
• Stress Induced Leakage Current 20%

Material Science

• Silicon 100%
• Magnetoresistance 100%
• Oxide Compound 80%
• Electrical Breakdown 20%
• Capacitor 20%
• Oxide Semiconductor 20%
• Metal Oxide 20%
• Semiconductor Device 20%

Physics

• Magnetic Resonance 100%
• Magnetoresistance 100%
• Semiconductor Device 20%
• Metal Oxide Semiconductor 20%
• Electrical Breakdown 20%
• Isotopic Abundance 20%