@inproceedings{4f46faaeafce481ca14ede5c1c53ce79,
title = "Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs",
abstract = "We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line shapes observed are nearly the same for vendor 1 devices subjected to a nitric oxide (NO) anneal and devices without it, the relationship between EDMR and gate voltage differs greatly between these samples. Furthermore, the EDMR response versus gate bias varies dramatically. EDMR results from a third device produced by a second vendor are very different from those provided by the first vendor. This result implies that significantly different defect populations are present in devices fabricated by different vendors.",
author = "Cochrane, {C. J.} and Lenahan, {Patrick M.} and Lelis, {A. J.}",
year = "2009",
month = jan,
day = "1",
language = "English (US)",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "719--722",
editor = "Takashi Fuyuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Akira Suzuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}