@inproceedings{74310e9ad91445b9ac012b21a7108832,
title = "Electrically Detected Magnetic Resonance Study of High-Field Stressing in SiOC:H Films",
abstract = "We have investigated the initial stages of dielectric breakdown in high-field stressed low-k dielectric (SiOC:H) capacitor structures. Our study makes use of electrically detected magnetic resonance (EDMR) via spin-dependent trap-assisted tunneling (SDTAT). We find at least two distinct stages precede the breakdown of the dielectrics: a very fast initial stage associated with an overall decrease in leakage current and a rapid generation of Si dangling bonds, and a much slower subsequent intermediate stage associated with an overall recovery of leakage current with little further Si dangling bond trap generation. The generation of these Si dangling bonds early-on in the device's lifetime seems to be associated with the initial decrease in conductance very early in device lifetimes observed in previous electrical studies.",
author = "Sharov, {F. V.} and Moxim, {S. J.} and Elko, {M. J.} and King, {S. W.} and Lenahan, {P. M.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Integrated Reliability Workshop, IIRW 2022 ; Conference date: 09-10-2022 Through 14-10-2022",
year = "2022",
doi = "10.1109/IIRW56459.2022.10032735",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Integrated Reliability Workshop, IIRW 2022",
address = "United States",
}