Electrically Detected Magnetic Resonance Study of High-Field Stressing in SiOC:H Films

Keyphrases

• Magnetic Resonance Techniques 100%
• Si Dangling Bonds 100%
• Electrically Detected Magnetic Resonance 100%
• High-field Stressing 100%
• Leakage Current 66%
• Device Lifetime 66%
• High Field 33%
• Spin-dependent 33%
• Conductance 33%
• Capacitor Structure 33%
• Dielectric 33%
• Electrical Studies 33%
• Rapid Generation 33%
• Trap-assisted Tunneling 33%
• Dielectric Breakdown 33%
• Silicon Oxycarbide (SiOC) 33%
• Low-k Dielectric 33%

Engineering

• Dielectrics 100%
• Dangling Bond 100%
• Initial Stage 66%
• Intermediate Stage 33%
• Tunnel Construction 33%

Material Science

• Dielectric Material 100%
• Electrical Breakdown 50%
• Capacitor 50%