@inproceedings{2b8aaf467635441780e85a61ef1370a1,
title = "Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs",
abstract = "SiC MOSFETs show promise for high power and high temperature applications, but bias temperature instabilities may potentially limit the performance of these devices. Utilizing electrically detected magnetic resonance (EDMR), we show that three different defect centers are generated during NBTS. Although a complete understanding of the EDMR is not yet available, the results provide strong evidence for E' centers, hydrogen, and hydrogen complexes involvement in the NBTI phenomena.",
author = "Anders, \{M. A.\} and Lenahan, \{P. M.\} and J. Follman and Arthur, \{S. D.\} and J. McMahon and L. Yu and X. Zhu and Lelis, \{A. J.\}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 ; Conference date: 12-10-2014 Through 16-10-2014",
year = "2014",
doi = "10.1109/IIRW.2014.7049497",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "16--19",
booktitle = "2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014",
address = "United States",
}