Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures

We evaluate the heterogeneous integration of the layered correlated electron material, 1T-TaS₂, on semiconducting 2H-MoS₂ for the realization of an all two-dimensional insulator-to-metal (IMT) phase transition device. First principles calculations investigate the band structure of the resulting heterostructure and confirm the existence of a charge density wave (CDW)-based bandgap. 1T-TaS₂ films are synthesized via powder vapor deposition on monolayer MoS₂ substrates and shown to exhibit CDW induced IMT phase transitions. Both Raman and electrical measurements display reversible commensurate to nearly commensurate CDW IMT phase transitions. Finally, a phase transition transistor device is demonstrated that harnesses the electrically triggered abrupt IMT in 1T-TaS₂ and semiconducting properties of 2H-MoS₂.