Electrode-contact enhancement in silicon nanowire-array-textured solar cells

Chen Chen; Rui Jia; Haofeng Li; Yanlong Meng; Xinyu Liu; Tianchun Ye; Seiya Kasai; Hashizume Tamotsu; Nanjian Wu; Shanli Wang; Junhao Chu

doi:10.1063/1.3576924

Electrode-contact enhancement in silicon nanowire-array-textured solar cells

Chen Chen, Rui Jia, Haofeng Li, Yanlong Meng, Xinyu Liu, Tianchun Ye, Seiya Kasai, Hashizume Tamotsu, Nanjian Wu, Shanli Wang, Junhao Chu

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

In the case of the silicon (Si) nanowire (NW)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped N⁺ region at the tips of a Si-NW array. The series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. We have studied the physical mechanism of the impact of an increase in doping level at the tips of a Si-NW array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell.

Original language	English (US)
Article number	143108
Journal	Applied Physics Letters
Volume	98
Issue number	14
DOIs	https://doi.org/10.1063/1.3576924
State	Published - Apr 4 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3576924

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@article{b3388f2233214ad9b8dbf0dba734fcdb,

title = "Electrode-contact enhancement in silicon nanowire-array-textured solar cells",

abstract = "In the case of the silicon (Si) nanowire (NW)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped N+ region at the tips of a Si-NW array. The series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. We have studied the physical mechanism of the impact of an increase in doping level at the tips of a Si-NW array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell.",

author = "Chen Chen and Rui Jia and Haofeng Li and Yanlong Meng and Xinyu Liu and Tianchun Ye and Seiya Kasai and Hashizume Tamotsu and Nanjian Wu and Shanli Wang and Junhao Chu",

note = "Funding Information: This work was subsidized by the 973 Projects under Grant Nos. 2006CB604904, 2009CB320302, and 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, 90401002, and 90607022, by CAS under Grant No. YZ0635, and under the Chinese Academy of solar energy action plan, China. Also this work was also subsidized by PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan. ",

year = "2011",

month = apr,

day = "4",

doi = "10.1063/1.3576924",

language = "English (US)",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

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TY - JOUR

T1 - Electrode-contact enhancement in silicon nanowire-array-textured solar cells

AU - Chen, Chen

AU - Jia, Rui

AU - Li, Haofeng

AU - Meng, Yanlong

AU - Liu, Xinyu

AU - Ye, Tianchun

AU - Kasai, Seiya

AU - Tamotsu, Hashizume

AU - Wu, Nanjian

AU - Wang, Shanli

AU - Chu, Junhao

N1 - Funding Information: This work was subsidized by the 973 Projects under Grant Nos. 2006CB604904, 2009CB320302, and 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, 90401002, and 90607022, by CAS under Grant No. YZ0635, and under the Chinese Academy of solar energy action plan, China. Also this work was also subsidized by PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan.

PY - 2011/4/4

Y1 - 2011/4/4

N2 - In the case of the silicon (Si) nanowire (NW)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped N+ region at the tips of a Si-NW array. The series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. We have studied the physical mechanism of the impact of an increase in doping level at the tips of a Si-NW array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell.

AB - In the case of the silicon (Si) nanowire (NW)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped N+ region at the tips of a Si-NW array. The series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. We have studied the physical mechanism of the impact of an increase in doping level at the tips of a Si-NW array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell.

UR - https://www.scopus.com/pages/publications/79954512744

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U2 - 10.1063/1.3576924

DO - 10.1063/1.3576924

M3 - Article

AN - SCOPUS:79954512744

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143108

ER -

Electrode-contact enhancement in silicon nanowire-array-textured solar cells

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All Science Journal Classification (ASJC) codes

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